Silicon carbide power device characteristics, applications and challenges: an overview

Silicon Carbide Power Device Characterization for HEVs

The emergence of silicon carbide(SiC-) based power semiconductor switches, with their superior features compared with silicon(Si-) based switches, has resulted in substantial improvement in the performance of power electronics converter systems. These systems with SiC power devices have the qualities of being more compact, lighter, and more efficient; thus, they are ideal for high-voltage power...

Silicon Carbide Power MESFET

Corrosion Characteristics of Silicon Carbide and Silicon Nitride

The present work is a review of the substantial effort that has been made to measure and understand the effects of corrosion with respect to the properties, performance, and durability of various forms of silicon carbide and silicon nitride. The review encompasses corrosion in diverse environments, usually at temperatures of 1000 °C or higher. The environments include dry and moist oxygen, mixt...

Temperature Dependency of MOSFET Device Characteristics in 4H- and 6H-Silicon Carbide (SiC)

An analytical model for lateral MOSFET that includes the effects of temperature variation in 4Hand 6H-SiC poly-type is presented in this paper. SiC shows a tremendous potential for high temperature electronics applications [1-4]. The model includes the effects of temperature variation on the threshold voltage, the carrier mobility, the body leakage current, and the drain and source contact regi...

Amorphous Silicon Carbide for Photovoltaic Applications

Dissertation zur Erlangung des akademischen Grades Doktor der Naturwissenschaften Introduction Figure 1.1: One possible amorphous silicon (white) and carbon (black) network with incorporated hydrogen (small black dots) a-SiC:H. 20 Figure 1.2: Fourier transformed infrared (FTIR) absorption spectra for a typical stoichiometric SiC layer as deposited at 350°C. 21 Figure 1.3: Auger electron spectro...